上海雷卯电子-MOSFET场效应管_MOS管选型_电源管理解决方案_电磁兼容EMC免费测试供应厂家

MOSFET canal N

BSS138

  • PackageSOT-23
  • Vdss Min(V) Drain-Source voltage50
  • Drain Current ID(A)25℃0.5
  • Vgs(V)±20
  • Vth Typ1.5
  • Ron(10V) (mΩ)Typ1600
  • Ron(10V) (mΩ) Max3000
  • Ron(4.5V) (mΩ)Typ2000
  • Ron(4.5V) (mΩ)Max4000
  • de plus en plus Moins
    Caractéristiques /Applications
    Caractéristiques /Applications
    Features
    ● VDs = 50V lD =0.3A
    ●RDS(ON)<32@VGS=10V
    ● High density cell design for low Ros(on)
    ●  Voltage controlled small signal switch
    ● Rugged and reliable
    ● High saturation current capability
    Applications
    ● Load Switch for Portable Devices
    ●DC/DC Converter
    Demande de renseignements
    enquête
    ver_code